P-33: Impact of tiO 2 incorporation in the structural and electrical property of the sputtered indium tin oxide field effect transistors

Ji In Kim, Kwang Hwan Ji, Jae Kyeong Jeong, Hoichang Yang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We demonstrate that controlled cation composition in ITO-based films combined with solid-solution doping by titanium as well as the suppression of crystallization. The field-effect transistor having 3.7at% Ti-doped ITO film exhibited the high mobility of 13.4 cm 2/Vs, low subthreshold gate swing of 0.25V/decade, and high I on/off ratio of >10 8.

Original languageEnglish
Pages (from-to)1212-1214
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume42 1
Publication statusPublished - 2011 Jun 1

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