We demonstrate that controlled cation composition in ITO-based films combined with solid-solution doping by titanium as well as the suppression of crystallization. The field-effect transistor having 3.7at% Ti-doped ITO film exhibited the high mobility of 13.4 cm 2/Vs, low subthreshold gate swing of 0.25V/decade, and high I on/off ratio of >10 8.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2011 Jun 1|