Ozone based high-temperature atomic layer deposition of SiO2 thin films

Su Min Hwang, Zhiyang Qin, Harrison Sejoon Kim, Arul Ravichandran, Yong Chan Jung, Si Joon Kim, Jinho Ahn, Byung Keun Hwang, Jiyoung Kim

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In this paper, atomic layer deposition of SiO2 thin films was investigated with Si2Cl6 and O3/O2 (400 g m-3). O3/O2 is not preferred for high-temperature (>400 °C) processes due to its lower decomposition temperature, especially in a furnace-type chamber. However, with Si oxidation test using a cold-wall chamber, we have demonstrated the reactivity of O3/O2 up to 800 °C in comparison with O2 and H2O. The ALD of SiO2 films was examined at deposition temperatures from 500 °C to 700 °C. The growth rate at 600 °C was saturated to 0.03 nm/cycle with Si2Cl6 exposure over 1.2 × 105 L. O3/O2 also showed ALD-like saturation behaviors for exposures over 2.4 × 106 L. The ALD films deposited at 600 °C exhibited relatively smooth surface roughness (<0.18 nm) and low wet etch rate (1.6 nm min-1, 500:1 HF) that are comparable with PECVD SiO2 deposited at 250 °C and LPCVD SiO2 deposited at 450 °C.

Original languageEnglish
Article numberSIIG05
JournalJapanese journal of applied physics
Issue numberSI
StatePublished - 2020 Jun 1

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