Oxidation study of polycrystalline InN film using in situ X-ray scattering and X-ray photoemission spectroscopy

Ik Jae Lee, Chungjong Yu, Hyun Joon Shin, Jae Yong Kim, Young Pak Lee, Tae Bong Hur, Hyung Kook Kim

Research output: Contribution to journalArticle

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Abstract

Oxidation process of polycrystalline InN films were investigated using in situ X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS). The films were grown by dc sputter on sapphire (0001) substrates and were oxidized in air at elevated temperatures. The XRD data showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 Å) above 450 °C. Chemical configurations of the sample surfaces were investigated using high-resolution XPS. For the non-intentionally oxidized InN film, XPS analysis on the In 3d peak and the N 1s main peak at 396.4 eV suggests that indium and nitrogen are bound dominantly in the form of InN. An additional peak observed at 397.4 eV in the N 1s photoelectrons and the O 1s peaks indicate that the InN film surface is partly oxidized to have InOxNy configuration. After oxidation of the InN film at elevated temperature, the O 1s spectrum is dominated by In2O3 peak, which indicates that the structure is stable chemically with In2O3 configuration at least within the XPS probing depth of a few nm.

Original languageEnglish
Pages (from-to)4691-4695
Number of pages5
JournalThin Solid Films
Volume515
Issue number11
DOIs
StatePublished - 2007 Apr 9

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Photoelectron spectroscopy
X ray spectroscopy
X ray scattering
photoelectric emission
Oxidation
oxidation
scattering
spectroscopy
x rays
X ray diffraction
configurations
Indium
Aluminum Oxide
Photoelectrons
diffraction
Sapphire
Nitrogen
indium
sapphire
photoelectrons

Keywords

  • Oxidation
  • Sputtering
  • X-ray diffraction
  • X-ray photoemission spectroscopy

Cite this

Lee, Ik Jae ; Yu, Chungjong ; Shin, Hyun Joon ; Kim, Jae Yong ; Lee, Young Pak ; Hur, Tae Bong ; Kim, Hyung Kook. / Oxidation study of polycrystalline InN film using in situ X-ray scattering and X-ray photoemission spectroscopy. In: Thin Solid Films. 2007 ; Vol. 515, No. 11. pp. 4691-4695.
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abstract = "Oxidation process of polycrystalline InN films were investigated using in situ X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS). The films were grown by dc sputter on sapphire (0001) substrates and were oxidized in air at elevated temperatures. The XRD data showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 {\AA}) above 450 °C. Chemical configurations of the sample surfaces were investigated using high-resolution XPS. For the non-intentionally oxidized InN film, XPS analysis on the In 3d peak and the N 1s main peak at 396.4 eV suggests that indium and nitrogen are bound dominantly in the form of InN. An additional peak observed at 397.4 eV in the N 1s photoelectrons and the O 1s peaks indicate that the InN film surface is partly oxidized to have InOxNy configuration. After oxidation of the InN film at elevated temperature, the O 1s spectrum is dominated by In2O3 peak, which indicates that the structure is stable chemically with In2O3 configuration at least within the XPS probing depth of a few nm.",
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Oxidation study of polycrystalline InN film using in situ X-ray scattering and X-ray photoemission spectroscopy. / Lee, Ik Jae; Yu, Chungjong; Shin, Hyun Joon; Kim, Jae Yong; Lee, Young Pak; Hur, Tae Bong; Kim, Hyung Kook.

In: Thin Solid Films, Vol. 515, No. 11, 09.04.2007, p. 4691-4695.

Research output: Contribution to journalArticle

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AB - Oxidation process of polycrystalline InN films were investigated using in situ X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS). The films were grown by dc sputter on sapphire (0001) substrates and were oxidized in air at elevated temperatures. The XRD data showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 Å) above 450 °C. Chemical configurations of the sample surfaces were investigated using high-resolution XPS. For the non-intentionally oxidized InN film, XPS analysis on the In 3d peak and the N 1s main peak at 396.4 eV suggests that indium and nitrogen are bound dominantly in the form of InN. An additional peak observed at 397.4 eV in the N 1s photoelectrons and the O 1s peaks indicate that the InN film surface is partly oxidized to have InOxNy configuration. After oxidation of the InN film at elevated temperature, the O 1s spectrum is dominated by In2O3 peak, which indicates that the structure is stable chemically with In2O3 configuration at least within the XPS probing depth of a few nm.

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