Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering

Ik Jae Lee, Jae Yong Kim, Tae Bong Hur, Hyung Kook Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report, for the first time, the oxidation behaviors of polycrystalline InN films using synchrotron based in-situ X-ray diffraction (XRD) studies. The films (≈1200-Å-thick) were grown by dc sputter on sapphire (0001) substrates and were oxidized immediately in air at elevated temperatures. The XRD data taken from the films showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 Å) above 450°C. The c-lattice constant changed from 5.810 Å to 5.716 Å indicating that the strain of the film was relaxed upon the thermal heating. The rocking curves measured from the InN (0002) peak obtained by an ω scan showed decreasing the peak intensity with increasing the background at 700°C. This result directly suggests that the grains of the InN are getting disordered and the early-strained InN layer formed at the bottom of the film is oxidized. The physical properties of thickness and expansion of the oxide layer measured by using X-ray reflectivity will be also discussed.

Original languageEnglish
Pages (from-to)2777-2781
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
StatePublished - 2004 Sep 1

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Aluminum Oxide
X ray scattering
Synchrotrons
Sapphire
synchrotrons
sapphire
Oxidation
oxidation
scattering
x rays
X ray diffraction
diffraction
Thick films
Oxides
Lattice constants
thick films
Physical properties
physical properties
reflectance
Heating

Cite this

Lee, Ik Jae ; Kim, Jae Yong ; Hur, Tae Bong ; Kim, Hyung Kook. / Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 12. pp. 2777-2781.
@article{3965fca172ce4a838216275de751b55c,
title = "Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering",
abstract = "We report, for the first time, the oxidation behaviors of polycrystalline InN films using synchrotron based in-situ X-ray diffraction (XRD) studies. The films (≈1200-{\AA}-thick) were grown by dc sputter on sapphire (0001) substrates and were oxidized immediately in air at elevated temperatures. The XRD data taken from the films showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 {\AA}) above 450°C. The c-lattice constant changed from 5.810 {\AA} to 5.716 {\AA} indicating that the strain of the film was relaxed upon the thermal heating. The rocking curves measured from the InN (0002) peak obtained by an ω scan showed decreasing the peak intensity with increasing the background at 700°C. This result directly suggests that the grains of the InN are getting disordered and the early-strained InN layer formed at the bottom of the film is oxidized. The physical properties of thickness and expansion of the oxide layer measured by using X-ray reflectivity will be also discussed.",
author = "Lee, {Ik Jae} and Kim, {Jae Yong} and Hur, {Tae Bong} and Kim, {Hyung Kook}",
year = "2004",
month = "9",
day = "1",
doi = "10.1002/pssa.200405025",
language = "English",
volume = "201",
pages = "2777--2781",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
number = "12",

}

Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering. / Lee, Ik Jae; Kim, Jae Yong; Hur, Tae Bong; Kim, Hyung Kook.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 01.09.2004, p. 2777-2781.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering

AU - Lee, Ik Jae

AU - Kim, Jae Yong

AU - Hur, Tae Bong

AU - Kim, Hyung Kook

PY - 2004/9/1

Y1 - 2004/9/1

N2 - We report, for the first time, the oxidation behaviors of polycrystalline InN films using synchrotron based in-situ X-ray diffraction (XRD) studies. The films (≈1200-Å-thick) were grown by dc sputter on sapphire (0001) substrates and were oxidized immediately in air at elevated temperatures. The XRD data taken from the films showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 Å) above 450°C. The c-lattice constant changed from 5.810 Å to 5.716 Å indicating that the strain of the film was relaxed upon the thermal heating. The rocking curves measured from the InN (0002) peak obtained by an ω scan showed decreasing the peak intensity with increasing the background at 700°C. This result directly suggests that the grains of the InN are getting disordered and the early-strained InN layer formed at the bottom of the film is oxidized. The physical properties of thickness and expansion of the oxide layer measured by using X-ray reflectivity will be also discussed.

AB - We report, for the first time, the oxidation behaviors of polycrystalline InN films using synchrotron based in-situ X-ray diffraction (XRD) studies. The films (≈1200-Å-thick) were grown by dc sputter on sapphire (0001) substrates and were oxidized immediately in air at elevated temperatures. The XRD data taken from the films showed that the structure of the films changed to the bixbyite In2O3 (a = 10.11 Å) above 450°C. The c-lattice constant changed from 5.810 Å to 5.716 Å indicating that the strain of the film was relaxed upon the thermal heating. The rocking curves measured from the InN (0002) peak obtained by an ω scan showed decreasing the peak intensity with increasing the background at 700°C. This result directly suggests that the grains of the InN are getting disordered and the early-strained InN layer formed at the bottom of the film is oxidized. The physical properties of thickness and expansion of the oxide layer measured by using X-ray reflectivity will be also discussed.

UR - http://www.scopus.com/inward/record.url?scp=7044226233&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405025

DO - 10.1002/pssa.200405025

M3 - Article

AN - SCOPUS:7044226233

VL - 201

SP - 2777

EP - 2781

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 12

ER -