Oxidation behavior and microstructural evolution of graphite substrates with SiC and Si 3N 4 coatings prepared by using a solid-vapor reaction

Jeong Pyo Kim, Sung Il Jung, Young Suk Sim, Yeon Gil Jung, Ungyu Paik, Vijay K. Srivastava, Shraddha Singh, Akash Mohanty

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The oxidation behavior of graphite substrates with silicon carbide (SiC) and silicon nitride (Si 3N 4) coatings, prepared by using a solid-vapor reaction process, was investigated in cyclic oxidation tests. The effect of the porosity of the substrate on the oxidation behavior was also investigated. Substrates with the SiC coating showed higher weight loss than those with the Si 3N 4 coating. Oxidation of the substrates with 10 and 13 % porosities with the Si 3N 4 coating took place at 900 °C and at 1000 °C, respectively. However, after long term cyclic oxidation tests, the substrate with 13 % porosity with the Si 3N 4 coating was oxidized at a relatively low temperature of 800 °C, even though the weight loss was below 10 %. In the case of the SiC coatings, detachment of the coating region or full oxidation of the substrates took place whereas in the case of the Si 3N 4 coatings, no evidence of delamination or detachment of the coating region was observed after oxidation. The oxidation was affected by the coating thickness and by the type of materials coated on the substrate, not by the porosity of the substrate itself, although the coating thickness did depend on the porosity of the substrate.

Original languageEnglish
Pages (from-to)1172-1179
Number of pages8
JournalJournal of the Korean Physical Society
Volume54
Issue number3
DOIs
StatePublished - 2009 Mar 1

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silicon carbides
graphite
vapors
coatings
oxidation
porosity
detachment
silicon nitrides

Keywords

  • Coating
  • Oxidation
  • Porosity
  • Silicon carbide
  • Silicon nitride

Cite this

Kim, Jeong Pyo ; Jung, Sung Il ; Sim, Young Suk ; Jung, Yeon Gil ; Paik, Ungyu ; Srivastava, Vijay K. ; Singh, Shraddha ; Mohanty, Akash. / Oxidation behavior and microstructural evolution of graphite substrates with SiC and Si 3N 4 coatings prepared by using a solid-vapor reaction. In: Journal of the Korean Physical Society. 2009 ; Vol. 54, No. 3. pp. 1172-1179.
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abstract = "The oxidation behavior of graphite substrates with silicon carbide (SiC) and silicon nitride (Si 3N 4) coatings, prepared by using a solid-vapor reaction process, was investigated in cyclic oxidation tests. The effect of the porosity of the substrate on the oxidation behavior was also investigated. Substrates with the SiC coating showed higher weight loss than those with the Si 3N 4 coating. Oxidation of the substrates with 10 and 13 {\%} porosities with the Si 3N 4 coating took place at 900 °C and at 1000 °C, respectively. However, after long term cyclic oxidation tests, the substrate with 13 {\%} porosity with the Si 3N 4 coating was oxidized at a relatively low temperature of 800 °C, even though the weight loss was below 10 {\%}. In the case of the SiC coatings, detachment of the coating region or full oxidation of the substrates took place whereas in the case of the Si 3N 4 coatings, no evidence of delamination or detachment of the coating region was observed after oxidation. The oxidation was affected by the coating thickness and by the type of materials coated on the substrate, not by the porosity of the substrate itself, although the coating thickness did depend on the porosity of the substrate.",
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Oxidation behavior and microstructural evolution of graphite substrates with SiC and Si 3N 4 coatings prepared by using a solid-vapor reaction. / Kim, Jeong Pyo; Jung, Sung Il; Sim, Young Suk; Jung, Yeon Gil; Paik, Ungyu; Srivastava, Vijay K.; Singh, Shraddha; Mohanty, Akash.

In: Journal of the Korean Physical Society, Vol. 54, No. 3, 01.03.2009, p. 1172-1179.

Research output: Contribution to journalArticle

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AU - Kim, Jeong Pyo

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AU - Jung, Yeon Gil

AU - Paik, Ungyu

AU - Srivastava, Vijay K.

AU - Singh, Shraddha

AU - Mohanty, Akash

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N2 - The oxidation behavior of graphite substrates with silicon carbide (SiC) and silicon nitride (Si 3N 4) coatings, prepared by using a solid-vapor reaction process, was investigated in cyclic oxidation tests. The effect of the porosity of the substrate on the oxidation behavior was also investigated. Substrates with the SiC coating showed higher weight loss than those with the Si 3N 4 coating. Oxidation of the substrates with 10 and 13 % porosities with the Si 3N 4 coating took place at 900 °C and at 1000 °C, respectively. However, after long term cyclic oxidation tests, the substrate with 13 % porosity with the Si 3N 4 coating was oxidized at a relatively low temperature of 800 °C, even though the weight loss was below 10 %. In the case of the SiC coatings, detachment of the coating region or full oxidation of the substrates took place whereas in the case of the Si 3N 4 coatings, no evidence of delamination or detachment of the coating region was observed after oxidation. The oxidation was affected by the coating thickness and by the type of materials coated on the substrate, not by the porosity of the substrate itself, although the coating thickness did depend on the porosity of the substrate.

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