Organic thin film transistors with an organic/high-k inorganic bilayer gate dielectric layer

Y. G. Seol, N. E. Lee, S. S. Lee, J. H. Ahn

Research output: Contribution to journalConference articlepeer-review

Abstract

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited HfO2 layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

Original languageEnglish
Pages (from-to)1185-1188
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
StatePublished - 2006
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

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