Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs)

Mumtaz Ali, Andrey Sokolov, Min Jae Ko, Changhwan Choi

Research output: Contribution to journalArticlepeer-review

Abstract

Carbon-based organic material such as nitrogen-doped graphene oxide quantum dots (N-GOQDs) is a new-class material with unique biocompatible, high chemical inertness, and elevated photoluminescence properties. Two-terminal diffusive memristors can faithfully replicate biological synapse function via mutual similarities of in-/out-diffusion of Ag+ ions with biological Ca2+ migration dynamics for neural network applications. Inspired by hetero-plasticity phenomenon, in which Ca2+ dynamics can also be tuned by the 3rd counterpart – neuromodulatory axon, in this study, using an ultra-violet light source, we develop N-GOQDs based diffusive memristor that performs light-modulated synaptic behaviors. Specifically, photo-sensitive N-GOQDs ionic conductor shows n-π∗ electron transitions under UV excitation; yet, nitrogen-doping further facilitates the electron transitions, giving out additional conductance induced by light. Further, we demonstrate endurable threshold resistive switching (TS) behavior based on Ag+ ions migration and its variety of facilitations via assisted UV illumination. The enhancement of post-synaptic current under assisted UV light, as well as the light stimulated transition from short-to long-term memory potentiation have been achieved. These findings are believed to be a step forward for the realization of higher bandwidth synapse modulation as future hardware-based neural network applications.

Original languageEnglish
Article number157514
JournalJournal of Alloys and Compounds
Volume855
DOIs
StatePublished - 2021 Feb 25

Keywords

  • Diffusive memristor
  • Graphene oxide
  • Light stimulation
  • Synapse device
  • Threshold switching

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