Optical properties and field emission of zno nanorods grown on p-type porous Si

Taehee Park, Eunkyung Park, Juwon Ahn, Jungwoo Lee, Jongtaek Lee, Sang Hwa Lee, Jae-yong Kim, Whikun Yi

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/?m were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

Original languageEnglish
Pages (from-to)1779-1782
Number of pages4
JournalBulletin of the Korean Chemical Society
Volume34
Issue number6
DOIs
StatePublished - 2013 Jun 20

Keywords

  • Electroluminescence
  • Field emission
  • N-Type ZnO nanorod
  • Photoluminescence
  • Porous silicon

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