New model for low-frequency noise in poly-Si resistors

Jungil Lee, Iiki Man, Soo Kyung Chang, Eun Kyu Kim, Myoung Bok Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters.

Original languageEnglish
Pages (from-to)1054-1059
Number of pages6
JournalKey Engineering Materials
Volume277-279
Issue numberI
StatePublished - 2005 Dec 1

Fingerprint

Polysilicon
Resistors
Grain boundaries
Electric space charge
Defect density
Chemical activation
Thin films
Defects

Keywords

  • Low-frequency noise
  • Poly-Si resistors
  • Random walk of electrons
  • Thermal activation
  • Thermionic emission
  • Tunneling

Cite this

Lee, J., Man, I., Chang, S. K., Kim, E. K., & Lee, M. B. (2005). New model for low-frequency noise in poly-Si resistors. Key Engineering Materials, 277-279(I), 1054-1059.
Lee, Jungil ; Man, Iiki ; Chang, Soo Kyung ; Kim, Eun Kyu ; Lee, Myoung Bok. / New model for low-frequency noise in poly-Si resistors. In: Key Engineering Materials. 2005 ; Vol. 277-279, No. I. pp. 1054-1059.
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Lee, J, Man, I, Chang, SK, Kim, EK & Lee, MB 2005, 'New model for low-frequency noise in poly-Si resistors', Key Engineering Materials, vol. 277-279, no. I, pp. 1054-1059.

New model for low-frequency noise in poly-Si resistors. / Lee, Jungil; Man, Iiki; Chang, Soo Kyung; Kim, Eun Kyu; Lee, Myoung Bok.

In: Key Engineering Materials, Vol. 277-279, No. I, 01.12.2005, p. 1054-1059.

Research output: Contribution to journalArticle

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T1 - New model for low-frequency noise in poly-Si resistors

AU - Lee, Jungil

AU - Man, Iiki

AU - Chang, Soo Kyung

AU - Kim, Eun Kyu

AU - Lee, Myoung Bok

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N2 - This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters.

AB - This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters.

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Lee J, Man I, Chang SK, Kim EK, Lee MB. New model for low-frequency noise in poly-Si resistors. Key Engineering Materials. 2005 Dec 1;277-279(I):1054-1059.