Nanofabrication of a methacrylate-based polymer on a silicon substrate by using atomic force microscope lithography

Min Seok Son, Eung Ryul Kim, Haiwon Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A methacrylate-based polymer, which was composed of BPMA (1,3-bis (trimethylsilyl) isopropyl methacrylate), TFMA (tetra-hydrofurfuryl methacrylate), and MAA (methacrylic acid), was synthesized. That polymer was thermally stable up to 140 °C and was suitably resistant to a HF etching solution. The patterning of the spin-cast polymer on a silicon substrate was carried out under various conditions using an atomic force microscope (AFM), and protruded patterns were fabricated with a line width of 60 nm.

Original languageEnglish
Pages (from-to)949-952
Number of pages4
JournalJournal of the Korean Physical Society
Volume41
Issue number6
StatePublished - 2002 Dec 1

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nanofabrication
lithography
microscopes
polymers
silicon
casts
etching
acids

Keywords

  • AFM anodization
  • Ething stripping
  • Lithography
  • Methacrylate-Based Polymer
  • Spin-coated film

Cite this

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abstract = "A methacrylate-based polymer, which was composed of BPMA (1,3-bis (trimethylsilyl) isopropyl methacrylate), TFMA (tetra-hydrofurfuryl methacrylate), and MAA (methacrylic acid), was synthesized. That polymer was thermally stable up to 140 °C and was suitably resistant to a HF etching solution. The patterning of the spin-cast polymer on a silicon substrate was carried out under various conditions using an atomic force microscope (AFM), and protruded patterns were fabricated with a line width of 60 nm.",
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Nanofabrication of a methacrylate-based polymer on a silicon substrate by using atomic force microscope lithography. / Son, Min Seok; Kim, Eung Ryul; Lee, Haiwon.

In: Journal of the Korean Physical Society, Vol. 41, No. 6, 01.12.2002, p. 949-952.

Research output: Contribution to journalArticle

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T1 - Nanofabrication of a methacrylate-based polymer on a silicon substrate by using atomic force microscope lithography

AU - Son, Min Seok

AU - Kim, Eung Ryul

AU - Lee, Haiwon

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N2 - A methacrylate-based polymer, which was composed of BPMA (1,3-bis (trimethylsilyl) isopropyl methacrylate), TFMA (tetra-hydrofurfuryl methacrylate), and MAA (methacrylic acid), was synthesized. That polymer was thermally stable up to 140 °C and was suitably resistant to a HF etching solution. The patterning of the spin-cast polymer on a silicon substrate was carried out under various conditions using an atomic force microscope (AFM), and protruded patterns were fabricated with a line width of 60 nm.

AB - A methacrylate-based polymer, which was composed of BPMA (1,3-bis (trimethylsilyl) isopropyl methacrylate), TFMA (tetra-hydrofurfuryl methacrylate), and MAA (methacrylic acid), was synthesized. That polymer was thermally stable up to 140 °C and was suitably resistant to a HF etching solution. The patterning of the spin-cast polymer on a silicon substrate was carried out under various conditions using an atomic force microscope (AFM), and protruded patterns were fabricated with a line width of 60 nm.

KW - AFM anodization

KW - Ething stripping

KW - Lithography

KW - Methacrylate-Based Polymer

KW - Spin-coated film

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