Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction

Sung Gyu Lee, Guk Jin Kim, In Seon Kim, Jinho Ahn, Jin Goo Park, Hye Keun Oh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system.

Original languageEnglish
Article number043501
JournalJournal of Micro/ Nanolithography, MEMS, and MOEMS
Volume14
Issue number4
DOIs
StatePublished - 2015 Oct 1

Fingerprint

pellicle
Radiation
Extreme ultraviolet lithography
Wave transmission
radiation
lithography
reflectance
Image quality
inspection
Inspection
alignment
degradation
slopes
Degradation
Defects
causes
defects

Keywords

  • Extreme-ultraviolet lithography
  • contaminations
  • defect-free mask
  • extreme-ultraviolet pellicle
  • multistack structure
  • out-of-band radiation

Cite this

Lee, Sung Gyu ; Kim, Guk Jin ; Kim, In Seon ; Ahn, Jinho ; Park, Jin Goo ; Oh, Hye Keun. / Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction. In: Journal of Micro/ Nanolithography, MEMS, and MOEMS. 2015 ; Vol. 14, No. 4.
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Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction. / Lee, Sung Gyu; Kim, Guk Jin; Kim, In Seon; Ahn, Jinho; Park, Jin Goo; Oh, Hye Keun.

In: Journal of Micro/ Nanolithography, MEMS, and MOEMS, Vol. 14, No. 4, 043501, 01.10.2015.

Research output: Contribution to journalArticle

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T1 - Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction

AU - Lee, Sung Gyu

AU - Kim, Guk Jin

AU - Kim, In Seon

AU - Ahn, Jinho

AU - Park, Jin Goo

AU - Oh, Hye Keun

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AB - We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system.

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KW - contaminations

KW - defect-free mask

KW - extreme-ultraviolet pellicle

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KW - out-of-band radiation

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