MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl3:tBuNH2

Oh Shim Joo, Kwang Deog Jung, Sung Hoon Cho, Je Hong Kyoung, Chang Kyu Ahn, Seung Chul Choi, Yongkwan Dong, Hoseop Yun, Sung-Hwan Han

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A new type of precursor, AlCl3:tBuNH2 adduct, has been designed. The synthesis, preparation, and characterization of A1N thin films have been carried out. The AlCl3:tBuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65°C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalChemical Vapor Deposition
Volume8
Issue number6
DOIs
StatePublished - 2002 Dec 1

Fingerprint

Aluminum nitride
aluminum nitrides
Metallorganic chemical vapor deposition
adducts
metalorganic chemical vapor deposition
Thin films
Sublimation
Rutherford backscattering spectroscopy
Auger electron spectroscopy
thin films
Vapor pressure
sublimation
vapor pressure
Auger spectroscopy
Atmospheric pressure
electron spectroscopy
Hydrogen
Chemical vapor deposition
backscattering
atmospheric pressure

Keywords

  • Aluminum nitride
  • MOCVD
  • Precursors

Cite this

Joo, Oh Shim ; Jung, Kwang Deog ; Cho, Sung Hoon ; Kyoung, Je Hong ; Ahn, Chang Kyu ; Choi, Seung Chul ; Dong, Yongkwan ; Yun, Hoseop ; Han, Sung-Hwan. / MOCVD of aluminum nitride thin films with a new type of single-source precursor : AlCl3:tBuNH2. In: Chemical Vapor Deposition. 2002 ; Vol. 8, No. 6. pp. 273-276.
@article{6717eec7251a466a932a88ab4954e966,
title = "MOCVD of aluminum nitride thin films with a new type of single-source precursor: AlCl3:tBuNH2",
abstract = "A new type of precursor, AlCl3:tBuNH2 adduct, has been designed. The synthesis, preparation, and characterization of A1N thin films have been carried out. The AlCl3:tBuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65°C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.",
keywords = "Aluminum nitride, MOCVD, Precursors",
author = "Joo, {Oh Shim} and Jung, {Kwang Deog} and Cho, {Sung Hoon} and Kyoung, {Je Hong} and Ahn, {Chang Kyu} and Choi, {Seung Chul} and Yongkwan Dong and Hoseop Yun and Sung-Hwan Han",
year = "2002",
month = "12",
day = "1",
doi = "10.1002/1521-3862(20021203)8:6<273::AID-CVDE273>3.0.CO;2-O",
language = "English",
volume = "8",
pages = "273--276",
journal = "Chemical Vapor Deposition",
issn = "0948-1907",
number = "6",

}

MOCVD of aluminum nitride thin films with a new type of single-source precursor : AlCl3:tBuNH2. / Joo, Oh Shim; Jung, Kwang Deog; Cho, Sung Hoon; Kyoung, Je Hong; Ahn, Chang Kyu; Choi, Seung Chul; Dong, Yongkwan; Yun, Hoseop; Han, Sung-Hwan.

In: Chemical Vapor Deposition, Vol. 8, No. 6, 01.12.2002, p. 273-276.

Research output: Contribution to journalArticle

TY - JOUR

T1 - MOCVD of aluminum nitride thin films with a new type of single-source precursor

T2 - AlCl3:tBuNH2

AU - Joo, Oh Shim

AU - Jung, Kwang Deog

AU - Cho, Sung Hoon

AU - Kyoung, Je Hong

AU - Ahn, Chang Kyu

AU - Choi, Seung Chul

AU - Dong, Yongkwan

AU - Yun, Hoseop

AU - Han, Sung-Hwan

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A new type of precursor, AlCl3:tBuNH2 adduct, has been designed. The synthesis, preparation, and characterization of A1N thin films have been carried out. The AlCl3:tBuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65°C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.

AB - A new type of precursor, AlCl3:tBuNH2 adduct, has been designed. The synthesis, preparation, and characterization of A1N thin films have been carried out. The AlCl3:tBuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65°C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.

KW - Aluminum nitride

KW - MOCVD

KW - Precursors

UR - http://www.scopus.com/inward/record.url?scp=0040081671&partnerID=8YFLogxK

U2 - 10.1002/1521-3862(20021203)8:6<273::AID-CVDE273>3.0.CO;2-O

DO - 10.1002/1521-3862(20021203)8:6<273::AID-CVDE273>3.0.CO;2-O

M3 - Article

AN - SCOPUS:0040081671

VL - 8

SP - 273

EP - 276

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

SN - 0948-1907

IS - 6

ER -