Microwave dielectric properties of low-fired Ba5Nb4O15

Dong Wan Kim, Jeong Ryeol Kim, Sung Hun Yoon, Kug Sun Hong, Chang Kyung Kim

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

The effect of B2O3 on the sintering temperature and microwave dielectric properties of Ba5Nb4O15 has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba5Nb4O15 and B2O3 led to formation of second phases, BaNb2O6 and BaB2O4. The addition of B2O3 to Ba5Nb4O15 resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba5Nb4O15 could be interpreted by measuring changes in the quality factor (Q × f), the relative dielectric constant (εr), and the temperature coefficient of resonant frequency (τf) as a function of B2O3 additions. More importantly, the formation of BaNb2O6 provided temperature compensation. The microwave dielectric properties of low-fired Ba5Nb4O15 had good dielectric properties: Q × f = 18700 GHz, εr = 39, and τf = 0 ppm/°C.

Original languageEnglish
Pages (from-to)2759-2762
Number of pages4
JournalJournal of the American Ceramic Society
Volume85
Issue number11
StatePublished - 2002 Nov 1

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Dielectric properties
Microwaves
Sintering
Temperature
Electric network analyzers
X ray powder diffraction
Natural frequencies
Permittivity
Scanning electron microscopy
boron oxide

Cite this

Kim, D. W., Kim, J. R., Yoon, S. H., Hong, K. S., & Kim, C. K. (2002). Microwave dielectric properties of low-fired Ba5Nb4O15. Journal of the American Ceramic Society, 85(11), 2759-2762.
Kim, Dong Wan ; Kim, Jeong Ryeol ; Yoon, Sung Hun ; Hong, Kug Sun ; Kim, Chang Kyung. / Microwave dielectric properties of low-fired Ba5Nb4O15. In: Journal of the American Ceramic Society. 2002 ; Vol. 85, No. 11. pp. 2759-2762.
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abstract = "The effect of B2O3 on the sintering temperature and microwave dielectric properties of Ba5Nb4O15 has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba5Nb4O15 and B2O3 led to formation of second phases, BaNb2O6 and BaB2O4. The addition of B2O3 to Ba5Nb4O15 resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba5Nb4O15 could be interpreted by measuring changes in the quality factor (Q × f), the relative dielectric constant (εr), and the temperature coefficient of resonant frequency (τf) as a function of B2O3 additions. More importantly, the formation of BaNb2O6 provided temperature compensation. The microwave dielectric properties of low-fired Ba5Nb4O15 had good dielectric properties: Q × f = 18700 GHz, εr = 39, and τf = 0 ppm/°C.",
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Kim, DW, Kim, JR, Yoon, SH, Hong, KS & Kim, CK 2002, 'Microwave dielectric properties of low-fired Ba5Nb4O15', Journal of the American Ceramic Society, vol. 85, no. 11, pp. 2759-2762.

Microwave dielectric properties of low-fired Ba5Nb4O15. / Kim, Dong Wan; Kim, Jeong Ryeol; Yoon, Sung Hun; Hong, Kug Sun; Kim, Chang Kyung.

In: Journal of the American Ceramic Society, Vol. 85, No. 11, 01.11.2002, p. 2759-2762.

Research output: Contribution to journalArticle

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AB - The effect of B2O3 on the sintering temperature and microwave dielectric properties of Ba5Nb4O15 has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba5Nb4O15 and B2O3 led to formation of second phases, BaNb2O6 and BaB2O4. The addition of B2O3 to Ba5Nb4O15 resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba5Nb4O15 could be interpreted by measuring changes in the quality factor (Q × f), the relative dielectric constant (εr), and the temperature coefficient of resonant frequency (τf) as a function of B2O3 additions. More importantly, the formation of BaNb2O6 provided temperature compensation. The microwave dielectric properties of low-fired Ba5Nb4O15 had good dielectric properties: Q × f = 18700 GHz, εr = 39, and τf = 0 ppm/°C.

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