Microstructural and electrical properties of MgO thin films grown on p-InP (100) substrates at low temperature

T. W. Kim, Y. S. You

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Abstract

The growth of MgO thin films on p-InP (100) substrates by using electron-beam deposition at a relatively low temperature (∼200°C) was performed in order to produce high-quality MgO/p-InP (100) heterointerface and MgO insulator gates with dielectric constants of low magnitude. Atomic force microscopy and X-ray diffraction measurements showed that the MgO films grown on the InP substrates were polycrystalline thin layers with very smooth surfaces. Transmission electron microscopy and selected-area diffraction measurements showed that the grown MgO films were polycrystals with small domains and that the MgO/InP (100) heterointerface had no significant interdiffusion problem. Room-temperature current-voltage and capacitance-voltage (C-V) measurements clearly revealed a metal-insulator-semiconductor behavior for the diodes with MgO insulator gates, and the interface state densities at the MgO/p-InP interfaces, as determined from the C-V measurements, were approximately 4.5 × 10 11 eV -1 cm -2 at an energy of about 0.7 eV below the conduction-band edge. The dielectric constant of the MgO thin films, as determined from the C-V measurements, was as low as 9.67. These results indicate that the MgO layers grown on p-InP (100) substrates at low temperature hold promise for potential electronic devices based on InP substrates.

Original languageEnglish
Pages (from-to)162-167
Number of pages6
JournalApplied Surface Science
Volume180
Issue number1-2
DOIs
StatePublished - 2001 Aug 1

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Keywords

  • Metal-insulator-semiconductor (MIS)
  • MgO/p-InP
  • Transmission electron microscopy (TEM)

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