Metastable behavior of deep levels in hydrogenated GaAs

Hoon Young Cho, Eun Kyu Kim, Suk Ki Min, K. J. Chang, Choochon Lee

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Abstract

New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.

Original languageEnglish
Pages (from-to)1866-1868
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number17
DOIs
StatePublished - 1991 Jan 1

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defects
traps
hydrogen atoms
metastable state
hydrogenation
conduction bands
electric fields
hydrogen

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Cho, Hoon Young ; Kim, Eun Kyu ; Min, Suk Ki ; Chang, K. J. ; Lee, Choochon. / Metastable behavior of deep levels in hydrogenated GaAs. In: Applied Physics Letters. 1991 ; Vol. 58, No. 17. pp. 1866-1868.
@article{e124d402dc164739affce19c53b06027,
title = "Metastable behavior of deep levels in hydrogenated GaAs",
abstract = "New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.",
author = "Cho, {Hoon Young} and Kim, {Eun Kyu} and Min, {Suk Ki} and Chang, {K. J.} and Choochon Lee",
year = "1991",
month = "1",
day = "1",
doi = "10.1063/1.105056",
language = "English",
volume = "58",
pages = "1866--1868",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "17",

}

Cho, HY, Kim, EK, Min, SK, Chang, KJ & Lee, C 1991, 'Metastable behavior of deep levels in hydrogenated GaAs', Applied Physics Letters, vol. 58, no. 17, pp. 1866-1868. https://doi.org/10.1063/1.105056

Metastable behavior of deep levels in hydrogenated GaAs. / Cho, Hoon Young; Kim, Eun Kyu; Min, Suk Ki; Chang, K. J.; Lee, Choochon.

In: Applied Physics Letters, Vol. 58, No. 17, 01.01.1991, p. 1866-1868.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Metastable behavior of deep levels in hydrogenated GaAs

AU - Cho, Hoon Young

AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Chang, K. J.

AU - Lee, Choochon

PY - 1991/1/1

Y1 - 1991/1/1

N2 - New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.

AB - New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E c) is generated during hydrogenation and shows metastable for the Ec - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec-0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.

UR - http://www.scopus.com/inward/record.url?scp=3643092991&partnerID=8YFLogxK

U2 - 10.1063/1.105056

DO - 10.1063/1.105056

M3 - Article

AN - SCOPUS:3643092991

VL - 58

SP - 1866

EP - 1868

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -