Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

Tae Hee Yoo, Byoung In Sang, Byung Yong Wang, Dae Soon Lim, Hyun Wook Kang, Won Kook Choi, Young Tack Lee, Young Jei Oh, Do Kyung Hwang

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalJournal of the Korean Physical Society
Volume68
Issue number7
DOIs
StatePublished - 2016 Apr 1

Keywords

  • Brillouin scattering
  • Dielectric
  • Elastic property
  • PDMS
  • Relaxation process

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    Yoo, T. H., Sang, B. I., Wang, B. Y., Lim, D. S., Kang, H. W., Choi, W. K., Lee, Y. T., Oh, Y. J., & Hwang, D. K. (2016). Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode. Journal of the Korean Physical Society, 68(7), 901-907. https://doi.org/10.3938/jkps.68.901