Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films

H. C. Jeon, T. W. Kang, Taewhan Kim, Joongoo Kang, K. J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages400-401
Number of pages2
Volume1
DOIs
StatePublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Electronic properties
Magnetization
Magnetic properties
Thin films
Doping (additives)
Curie temperature
Vacancies
Magnetic fields
Temperature

Keywords

  • (GaMn)N thin film
  • High Curie temperature
  • Mn delta-doping

Cite this

Jeon, H. C., Kang, T. W., Kim, T., Kang, J., & Chang, K. J. (2006). Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 400-401). [4388786] https://doi.org/10.1109/NMDC.2006.4388786
Jeon, H. C. ; Kang, T. W. ; Kim, Taewhan ; Kang, Joongoo ; Chang, K. J. / Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 400-401
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abstract = "The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.",
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Jeon, HC, Kang, TW, Kim, T, Kang, J & Chang, KJ 2006, Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388786, pp. 400-401, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388786

Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films. / Jeon, H. C.; Kang, T. W.; Kim, Taewhan; Kang, Joongoo; Chang, K. J.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 400-401 4388786.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kim, Taewhan

AU - Kang, Joongoo

AU - Chang, K. J.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

AB - The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

KW - (GaMn)N thin film

KW - High Curie temperature

KW - Mn delta-doping

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U2 - 10.1109/NMDC.2006.4388786

DO - 10.1109/NMDC.2006.4388786

M3 - Conference contribution

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SN - 1424405408

SN - 9781424405404

VL - 1

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BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

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Jeon HC, Kang TW, Kim T, Kang J, Chang KJ. Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 400-401. 4388786 https://doi.org/10.1109/NMDC.2006.4388786