Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

Yeong Don Park, Do Hwan Kim, Yunseok Jang, Minkyu Hwang, Jung Ah Lim, Kilwon Cho

Research output: Contribution to journalArticle

72 Scopus citations

Abstract

By a simple process, we manufactured polymer thin-film transistors (PTFTs) using a 2.6 nm thick self-assembled monolayer (SAM) of alkyl chains as the gate dielectric to reduce the operating voltage of the device. These manufactured PTFTs operate with supply voltages of less than 2 V. A densely packed SAM of docosyltrichlorosilanes (DCTS) was a very efficient insulating barrier due to the very limited penetration of polymer transistor molecules into the SAM insulator. The present results show that a DCTS monolayer is suitable for use as a gate dielectric. These results enhance the prospects of using polymer TFTs with a SAM gate dielectric in low-power applications such as identification tags.

Original languageEnglish
Article number243509
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number24
DOIs
StatePublished - 2005 Dec 19

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