Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source

Yong Chan Jung, Su Min Hwang, Dan N. Le, Aswin L.N. Kondusamy, Jaidah Mohan, Sang Woo Kim, Jin Hyun Kim, Antonio T. Lucero, Arul Ravichandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175-350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

Original languageEnglish
Article number3387
Pages (from-to)1-10
Number of pages10
JournalMaterials
Volume13
Issue number15
DOIs
StatePublished - 2020 Aug

Keywords

  • Aluminum nitride
  • Atomic layer deposition (ALD)
  • Hydrazine
  • Trimethyl aluminum (TMA)

Fingerprint Dive into the research topics of 'Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source'. Together they form a unique fingerprint.

Cite this