Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates

In Ho Im, Jinsub Park, Tsutomu Minegishi, Seung Hwan Park, Takashi Hanada, Ji Ho Chang, Dong Cheol Oh, Meung Whan Cho, Takafumi Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

Original languageEnglish
Title of host publicationCOMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages156-159
Number of pages4
DOIs
StatePublished - 2006 Dec 1
Event2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia
Duration: 2006 Dec 62006 Dec 8

Other

Other2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
CountryAustralia
CityPerth
Period06/12/606/12/8

Fingerprint

Growth temperature
Thin films
Substrates
Aluminum Oxide
Secondary ion mass spectrometry
Sapphire
Fluxes
Crystalline materials
Atoms
Crystals

Keywords

  • Al flux
  • Component
  • Low temperature AlN
  • RHEED
  • SIMS
  • ZnO template

Cite this

Im, I. H., Park, J., Minegishi, T., Park, S. H., Hanada, T., Chang, J. H., ... Yao, T. (2006). Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 156-159). [4429904] https://doi.org/10.1109/COMMAD.2006.4429904
Im, In Ho ; Park, Jinsub ; Minegishi, Tsutomu ; Park, Seung Hwan ; Hanada, Takashi ; Chang, Ji Ho ; Oh, Dong Cheol ; Cho, Meung Whan ; Yao, Takafumi. / Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates. COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. pp. 156-159
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title = "Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates",
abstract = "We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.",
keywords = "Al flux, Component, Low temperature AlN, RHEED, SIMS, ZnO template",
author = "Im, {In Ho} and Jinsub Park and Tsutomu Minegishi and Park, {Seung Hwan} and Takashi Hanada and Chang, {Ji Ho} and Oh, {Dong Cheol} and Cho, {Meung Whan} and Takafumi Yao",
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doi = "10.1109/COMMAD.2006.4429904",
language = "English",
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Im, IH, Park, J, Minegishi, T, Park, SH, Hanada, T, Chang, JH, Oh, DC, Cho, MW & Yao, T 2006, Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices., 4429904, pp. 156-159, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 06/12/6. https://doi.org/10.1109/COMMAD.2006.4429904

Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates. / Im, In Ho; Park, Jinsub; Minegishi, Tsutomu; Park, Seung Hwan; Hanada, Takashi; Chang, Ji Ho; Oh, Dong Cheol; Cho, Meung Whan; Yao, Takafumi.

COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 156-159 4429904.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates

AU - Im, In Ho

AU - Park, Jinsub

AU - Minegishi, Tsutomu

AU - Park, Seung Hwan

AU - Hanada, Takashi

AU - Chang, Ji Ho

AU - Oh, Dong Cheol

AU - Cho, Meung Whan

AU - Yao, Takafumi

PY - 2006/12/1

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N2 - We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

AB - We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400 °C, which is quite low compared to the conventional growth temperature of 1000°C. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO.

KW - Al flux

KW - Component

KW - Low temperature AlN

KW - RHEED

KW - SIMS

KW - ZnO template

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BT - COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

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Im IH, Park J, Minegishi T, Park SH, Hanada T, Chang JH et al. Low-temperature growth of AlN thin films on ZnO templates prepared on Al2O3 substrates. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006. p. 156-159. 4429904 https://doi.org/10.1109/COMMAD.2006.4429904