Low resistance indium-based ohmic contacts to N-face n-GaN for GaN-based vertical Light Emitting Diodes

Ki Man Kang, Min Joo Park, Joon Seop Kwak, Hyun Soo Kim, Kwang Woo Kwon, Young Ho Kim

Research output: Contribution to journalArticle

Abstract

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Gaface n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laserlift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3×10-2 -cm2 after annealing at 300°C, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1×105 -cm2 after annealing at 500°C for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2×10-4 -cm2 after annealing at 300°C. These results suggest that both the Ga-face n-GaN and N-face nGaN.

Original languageEnglish
Pages (from-to)456-461
Number of pages6
JournalJournal of Korean Institute of Metals and Materials
Volume48
Issue number5
DOIs
StatePublished - 2010 May 1

Fingerprint

Indium
Ohmic contacts
Contact resistance
Diode
Light emitting diodes
Vertical
Contact Resistance
Face
Contact
Oxides
Annealing
Dry etching
Sheet resistance
Nitrogen
Resistance
InGaN
Etching

Keywords

  • Electrical properties electrical
  • Semiconductors
  • Sputtering

Cite this

Kang, Ki Man ; Park, Min Joo ; Kwak, Joon Seop ; Kim, Hyun Soo ; Kwon, Kwang Woo ; Kim, Young Ho. / Low resistance indium-based ohmic contacts to N-face n-GaN for GaN-based vertical Light Emitting Diodes. In: Journal of Korean Institute of Metals and Materials. 2010 ; Vol. 48, No. 5. pp. 456-461.
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Low resistance indium-based ohmic contacts to N-face n-GaN for GaN-based vertical Light Emitting Diodes. / Kang, Ki Man; Park, Min Joo; Kwak, Joon Seop; Kim, Hyun Soo; Kwon, Kwang Woo; Kim, Young Ho.

In: Journal of Korean Institute of Metals and Materials, Vol. 48, No. 5, 01.05.2010, p. 456-461.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low resistance indium-based ohmic contacts to N-face n-GaN for GaN-based vertical Light Emitting Diodes

AU - Kang, Ki Man

AU - Park, Min Joo

AU - Kwak, Joon Seop

AU - Kim, Hyun Soo

AU - Kwon, Kwang Woo

AU - Kim, Young Ho

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Gaface n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laserlift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3×10-2 -cm2 after annealing at 300°C, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1×105 -cm2 after annealing at 500°C for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2×10-4 -cm2 after annealing at 300°C. These results suggest that both the Ga-face n-GaN and N-face nGaN.

AB - We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Gaface n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laserlift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3×10-2 -cm2 after annealing at 300°C, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1×105 -cm2 after annealing at 500°C for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2×10-4 -cm2 after annealing at 300°C. These results suggest that both the Ga-face n-GaN and N-face nGaN.

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