Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique

Sung Jin Kim, Taek Ahn, Min Chul Sun, Chang-Jae Yu, Dong Woo Kim, Sin Doo Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using a patterning method of the selective wettability. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly(9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique, the leakage of the gate current is drastically reduced.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number33-36
DOIs
StatePublished - 2005 Aug 26

Fingerprint

Semiconducting polymers
Thin film transistors
Polymer films
leakage
transistors
wettability
Wetting
Lasers
polymers
thin films
lasers
Excimer lasers
excimer lasers
high resolution

Keywords

  • Laser assisted lift-off technique
  • Low leakage current
  • Organic TFT

Cite this

Kim, Sung Jin ; Ahn, Taek ; Sun, Min Chul ; Yu, Chang-Jae ; Kim, Dong Woo ; Lee, Sin Doo. / Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique. In: Japanese Journal of Applied Physics, Part 2: Letters. 2005 ; Vol. 44, No. 33-36.
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Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique. / Kim, Sung Jin; Ahn, Taek; Sun, Min Chul; Yu, Chang-Jae; Kim, Dong Woo; Lee, Sin Doo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 33-36, 26.08.2005.

Research output: Contribution to journalArticle

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T1 - Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique

AU - Kim, Sung Jin

AU - Ahn, Taek

AU - Sun, Min Chul

AU - Yu, Chang-Jae

AU - Kim, Dong Woo

AU - Lee, Sin Doo

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AB - Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using a patterning method of the selective wettability. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly(9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique, the leakage of the gate current is drastically reduced.

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