IVB-1 Comparison of Performance and Reliability Between MOSFET'S with LPCVD Gate Oxide and Thermal Gate Oxide

J. Ahn, W. Ting, D. L. Kwong

Research output: Contribution to journalArticle

1 Scopus citations
Original languageEnglish
Pages (from-to)2709-2710
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume38
Issue number12
DOIs
StatePublished - 1991 Dec

Cite this