Investigation of the effect of grain for vertically stacked NAND flash memory with a poly-gaas channel

Young Taek Oh, Sang Hoon Shin, Kyu Beom Kim, Yun Heub Song

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The cell characteristics of a vertically stacked NAND (V-NAND) flash memory with a poly-GaAs channel are investigated for the effect of grain using a three-dimensional simulation method, and they are compared to V-NAND with a poly-silicon channel. Under the same physical conditions, it is confirmed that the initial status of the V-NAND flash memory with a poly-GaAs channel shows a higher drain current and higher threshold voltage, which provides a better feasibility to improve the V-NAND flash memory. Due to the grain, V-NAND flash memory with a poly-GaAs channel shows more degradation in cell characteristics as the grain length decreases and the trap density in the grain boundary increases, compared to the V-NAND with a poly-silicon channel. Here, we explain that the higher energy band diagram in the poly-GaAs channel causes these results. The values of the trap density and grain length in the poly-GaAs channel are very important; the trap density should be maintained at a value less than 9e-13 cm?2eV?1 and the grain length should be maintained at a value more than 50 nm in order to obtain better cell characteristics compared to the V-NAND with a poly-Si channel.

Original languageEnglish
Pages (from-to)736-740
Number of pages5
JournalNanoscience and Nanotechnology Letters
Volume9
Issue number5
DOIs
StatePublished - 2017 May

Keywords

  • 3D NAND Flash Memory
  • GaAs Channel
  • Grain Boundary
  • TCAD Simulation

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