Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy

M. S. Han, S. R. Hahn, H. C. Kwon, Y. Bin, T. W. Kang, J. H. Leem, Y. B. Hou, H. C. Jeon, J. K. Hyun, Y. T. Jeoung, H. K. Kim, J. M. Kim, Taewhan Kim

Research output: Contribution to journalArticle

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Abstract

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/ 100Å) superlattice show a periodic arrangement of the superlattice with high- quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.

Original languageEnglish
Pages (from-to)680-683
Number of pages4
JournalJournal of Electronic Materials
Volume27
Issue number6
DOIs
StatePublished - 1998 Jan 1

Fingerprint

Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Rapid thermal annealing
interstitials
Substrates
mass spectroscopy
Spectroscopy
Ions
X rays
Crystals
curves
crystals
ions
x rays
Entropy
diffusion coefficient
Heat treatment
Satellites

Keywords

  • HgTe/CdTe superlattices
  • Interdiffusion
  • Molecular beam epitaxy

Cite this

Han, M. S. ; Hahn, S. R. ; Kwon, H. C. ; Bin, Y. ; Kang, T. W. ; Leem, J. H. ; Hou, Y. B. ; Jeon, H. C. ; Hyun, J. K. ; Jeoung, Y. T. ; Kim, H. K. ; Kim, J. M. ; Kim, Taewhan. / Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 6. pp. 680-683.
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title = "Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy",
abstract = "Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100{\AA}/ 100{\AA}) superlattice show a periodic arrangement of the superlattice with high- quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.",
keywords = "HgTe/CdTe superlattices, Interdiffusion, Molecular beam epitaxy",
author = "Han, {M. S.} and Hahn, {S. R.} and Kwon, {H. C.} and Y. Bin and Kang, {T. W.} and Leem, {J. H.} and Hou, {Y. B.} and Jeon, {H. C.} and Hyun, {J. K.} and Jeoung, {Y. T.} and Kim, {H. K.} and Kim, {J. M.} and Taewhan Kim",
year = "1998",
month = "1",
day = "1",
doi = "10.1007/s11664-998-0035-1",
language = "English",
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Han, MS, Hahn, SR, Kwon, HC, Bin, Y, Kang, TW, Leem, JH, Hou, YB, Jeon, HC, Hyun, JK, Jeoung, YT, Kim, HK, Kim, JM & Kim, T 1998, ' Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy ', Journal of Electronic Materials, vol. 27, no. 6, pp. 680-683. https://doi.org/10.1007/s11664-998-0035-1

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy . / Han, M. S.; Hahn, S. R.; Kwon, H. C.; Bin, Y.; Kang, T. W.; Leem, J. H.; Hou, Y. B.; Jeon, H. C.; Hyun, J. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Taewhan.

In: Journal of Electronic Materials, Vol. 27, No. 6, 01.01.1998, p. 680-683.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy

AU - Han, M. S.

AU - Hahn, S. R.

AU - Kwon, H. C.

AU - Bin, Y.

AU - Kang, T. W.

AU - Leem, J. H.

AU - Hou, Y. B.

AU - Jeon, H. C.

AU - Hyun, J. K.

AU - Jeoung, Y. T.

AU - Kim, H. K.

AU - Kim, J. M.

AU - Kim, Taewhan

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/ 100Å) superlattice show a periodic arrangement of the superlattice with high- quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.

AB - Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd 0.96 Zn 0.04 Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/ 100Å) superlattice show a periodic arrangement of the superlattice with high- quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.

KW - HgTe/CdTe superlattices

KW - Interdiffusion

KW - Molecular beam epitaxy

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U2 - 10.1007/s11664-998-0035-1

DO - 10.1007/s11664-998-0035-1

M3 - Article

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SP - 680

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

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IS - 6

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