Initial stage and reconstruction of GaAs/Si heterostructures

T. W. Kim, T. W. Kang, J. Y. Leem, S. S. Yom, Y. S. Yoon

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


GaAs epitaxial layers on Si(1 0 0) substrates having a single or a double domain 2×1 have been grown by molecular beam epitaxy using the two-step growth mode and thermal regrowth techniques. The initial stage and the reconstruction of the GaAs/Si heterostructures have been investigated in situ by Auger electron spectroscopy and reflection high-energy electron diffraction. GaAs layers grown by both methods show the reconstruction of a single domain, and models for the process of GaAs growth have been presented to explain the self-annihilation of the antiphase boundary.

Original languageEnglish
Pages (from-to)5603-5608
Number of pages6
JournalJournal of Materials Science
Issue number20
StatePublished - 1992 Jan


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