Influence of oxygen ratio in gate bias instability of amorphous InGaZnO thin film transistor

Nuri On, Hyeonjoo Seul, Sangtae Kim, Kijune Lee, Jae Kyeong Jeong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The PBTS dependent Vth variations for the self-aligned IGZO TFTs were examined. The activation energy barrier for the PBTS induced instability was found to be strongly dependent on the oxygen partial pressure during IGZO preparation, which was discussed on basis of the various degradation mechanisms.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1071-1073
Number of pages3
ISBN (Electronic)9781510845510
StatePublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16/12/716/12/9

Keywords

  • Gate bias instability
  • Oxygen ratio
  • TFT

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  • Cite this

    On, N., Seul, H., Kim, S., Lee, K., & Jeong, J. K. (2016). Influence of oxygen ratio in gate bias instability of amorphous InGaZnO thin film transistor. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 1071-1073). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 2). Society for Information Display.