Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Yoon Cheol Bae, Ah Rahm Lee, Gwang Ho Baek, Je Bock Chung, Tae Yoon Kim, Hyun Sik Im, Jin Pyo Hong

Research output: Contribution to journalArticle

Abstract

We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.

Original languageEnglish
Pages (from-to)355-358
Number of pages4
JournalCurrent Applied Physics
Volume14
Issue number3
DOIs
StatePublished - 2014 Mar 1

Keywords

  • Non-lattice oxygen
  • ReRAM
  • Resistive switching
  • XPS

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