Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior

Jae Il Jang, M. J. Lance, Songqing Wen, Ting Y. Tsui, G. M. Pharr

Research output: Contribution to journalArticle

240 Citations (Scopus)

Abstract

Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3°to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.

Original languageEnglish
Pages (from-to)1759-1770
Number of pages12
JournalActa Materialia
Volume53
Issue number6
DOIs
StatePublished - 2005 Apr 1

Fingerprint

Silicon
Nanoindentation
Indentation
Phase transitions
Unloading
Hardness
Single crystals
Spectroscopy
Imaging techniques

Keywords

  • Nanoindentation
  • Phase transformations
  • Raman spectroscopy
  • Silicon

Cite this

Jang, Jae Il ; Lance, M. J. ; Wen, Songqing ; Tsui, Ting Y. ; Pharr, G. M. / Indentation-induced phase transformations in silicon : Influences of load, rate and indenter angle on the transformation behavior. In: Acta Materialia. 2005 ; Vol. 53, No. 6. pp. 1759-1770.
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Indentation-induced phase transformations in silicon : Influences of load, rate and indenter angle on the transformation behavior. / Jang, Jae Il; Lance, M. J.; Wen, Songqing; Tsui, Ting Y.; Pharr, G. M.

In: Acta Materialia, Vol. 53, No. 6, 01.04.2005, p. 1759-1770.

Research output: Contribution to journalArticle

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AU - Tsui, Ting Y.

AU - Pharr, G. M.

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