In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon

Jin Seok Lee, Yun Ki Byeun, Sang Hoon Lee, Sung Churl Choi

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.

Original languageEnglish
Pages (from-to)257-263
Number of pages7
JournalJournal of Alloys and Compounds
Volume456
Issue number1-2
DOIs
StatePublished - 2008 May 29

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Carbothermal reduction
Nanowires
Carbon
Iron
Flow rate
Argon
Supersaturation
Powders
Flow of gases
Gases
Vapors
Catalysts
Liquids
Low's mixture
Temperature

Keywords

  • Calorimetry
  • Nanostructure
  • Scanning and transmission electron microscopy
  • Silicon carbide

Cite this

@article{13faf8ea440c4331aae4fd6a15245a97,
title = "In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon",
abstract = "Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.",
keywords = "Calorimetry, Nanostructure, Scanning and transmission electron microscopy, Silicon carbide",
author = "Lee, {Jin Seok} and Byeun, {Yun Ki} and Lee, {Sang Hoon} and Choi, {Sung Churl}",
year = "2008",
month = "5",
day = "29",
doi = "10.1016/j.jallcom.2007.02.010",
language = "English",
volume = "456",
pages = "257--263",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
number = "1-2",

}

In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon. / Lee, Jin Seok; Byeun, Yun Ki; Lee, Sang Hoon; Choi, Sung Churl.

In: Journal of Alloys and Compounds, Vol. 456, No. 1-2, 29.05.2008, p. 257-263.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon

AU - Lee, Jin Seok

AU - Byeun, Yun Ki

AU - Lee, Sang Hoon

AU - Choi, Sung Churl

PY - 2008/5/29

Y1 - 2008/5/29

N2 - Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.

AB - Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.

KW - Calorimetry

KW - Nanostructure

KW - Scanning and transmission electron microscopy

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=41549105319&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2007.02.010

DO - 10.1016/j.jallcom.2007.02.010

M3 - Article

AN - SCOPUS:41549105319

VL - 456

SP - 257

EP - 263

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1-2

ER -