Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation

H. C. Jeon, T. W. Kang, T. W. Kim

Research output: Contribution to journalArticle

Abstract

Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.

Original languageEnglish
Pages (from-to)249-251
Number of pages3
JournalJournal of Materials Science Letters
Volume20
Issue number3
DOIs
StatePublished - 2001 Feb 1

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Indium
Epitaxial layers
Passivation
Diodes
Epilayers
Substrates
Capacitance measurement
Voltage measurement
Charge density
Metals
Doping (additives)
Semiconductor materials
Temperature

Cite this

@article{0969671fd43145ecbf27ff309eb6bfed,
title = "Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation",
abstract = "Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.",
author = "Jeon, {H. C.} and Kang, {T. W.} and Kim, {T. W.}",
year = "2001",
month = "2",
day = "1",
doi = "10.1023/A:1006741406222",
language = "English",
volume = "20",
pages = "249--251",
journal = "Journal of Materials Science Letters",
issn = "0261-8028",
number = "3",

}

TY - JOUR

T1 - Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kim, T. W.

PY - 2001/2/1

Y1 - 2001/2/1

N2 - Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.

AB - Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.

UR - http://www.scopus.com/inward/record.url?scp=0035246809&partnerID=8YFLogxK

U2 - 10.1023/A:1006741406222

DO - 10.1023/A:1006741406222

M3 - Article

AN - SCOPUS:0035246809

VL - 20

SP - 249

EP - 251

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

SN - 0261-8028

IS - 3

ER -