Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Hyun Suk Kim, Seok Jun Seo, Sun Jae Kim, Jong Baek Seon, Kwang Hwan Ji, Jae Kyeong Jeong, Myung Kwan Ryu, Sangyoon Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The optical absorption in the sub-gap region of amorphous indium zinc oxide films and the photo-induced negative bias stability of the resulting thin film transistors were studied. As the indium ratio increases, optical absorption via sub-gap states increases, and the threshold voltage degradation under negative bias temperature stress (NBTS) with light illumination becomes more severe. By applying high pressure anneal treatments in oxygen ambient, the density of sub-gap states is reduced by an order of magnitude compared to air-annealed devices. Consequently, significant improvements are observed in the threshold voltage shifts and the stretched exponential parameters under NBTS with light illumination.

Original languageEnglish
Article number122108
JournalApplied Physics Letters
Volume102
Issue number12
DOIs
StatePublished - 2013 Mar 25

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transistors
threshold voltage
oxides
optical absorption
oxygen
thin films
illumination
zinc oxides
indium oxides
indium
oxide films
degradation
temperature
shift
air

Cite this

Son, Kyoung Seok ; Seok Park, Joon ; Sang Kim, Tae ; Kim, Hyun Suk ; Seo, Seok Jun ; Kim, Sun Jae ; Baek Seon, Jong ; Hwan Ji, Kwang ; Jeong, Jae Kyeong ; Kwan Ryu, Myung ; Lee, Sangyoon. / Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies. In: Applied Physics Letters. 2013 ; Vol. 102, No. 12.
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abstract = "The optical absorption in the sub-gap region of amorphous indium zinc oxide films and the photo-induced negative bias stability of the resulting thin film transistors were studied. As the indium ratio increases, optical absorption via sub-gap states increases, and the threshold voltage degradation under negative bias temperature stress (NBTS) with light illumination becomes more severe. By applying high pressure anneal treatments in oxygen ambient, the density of sub-gap states is reduced by an order of magnitude compared to air-annealed devices. Consequently, significant improvements are observed in the threshold voltage shifts and the stretched exponential parameters under NBTS with light illumination.",
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year = "2013",
month = "3",
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Son, KS, Seok Park, J, Sang Kim, T, Kim, HS, Seo, SJ, Kim, SJ, Baek Seon, J, Hwan Ji, K, Jeong, JK, Kwan Ryu, M & Lee, S 2013, 'Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies', Applied Physics Letters, vol. 102, no. 12, 122108. https://doi.org/10.1063/1.4794419

Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies. / Son, Kyoung Seok; Seok Park, Joon; Sang Kim, Tae; Kim, Hyun Suk; Seo, Seok Jun; Kim, Sun Jae; Baek Seon, Jong; Hwan Ji, Kwang; Jeong, Jae Kyeong; Kwan Ryu, Myung; Lee, Sangyoon.

In: Applied Physics Letters, Vol. 102, No. 12, 122108, 25.03.2013.

Research output: Contribution to journalArticle

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AU - Son, Kyoung Seok

AU - Seok Park, Joon

AU - Sang Kim, Tae

AU - Kim, Hyun Suk

AU - Seo, Seok Jun

AU - Kim, Sun Jae

AU - Baek Seon, Jong

AU - Hwan Ji, Kwang

AU - Jeong, Jae Kyeong

AU - Kwan Ryu, Myung

AU - Lee, Sangyoon

PY - 2013/3/25

Y1 - 2013/3/25

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