Improvement of charge storage characteristics on floating gated nonvolatile memory devices with In2O3 nanoparticles embedded polyimide gate insulator

Hyun Mo Koo, Won Ju Cho, Dong Uk Lee, Seon Pil Kim, Eun Kyu Kim

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Nanofloating gate memory (NFGM) devices using In2 O3 nanoparticles as charge storages embedded in polyimide gate insulator were fabricated. Self-assembled In2 O3 nanoparticles were formed inside the polyimide matrix as a result of chemical reactions between indium ions and polymer precursors. The average diameter and the particle density were 7 nm and 6× 1011 cm-2, respectively. The memory window of fabricated NFGM device due to the charging effect of In2 O3 particles was larger than 4.4 V. The charge storage characteristics of NFGM devices with In2 O3 nanoparticles embedded in polyimide gate insulator were significantly improved by the postannealing in a 3% diluted hydrogen in N2 ambient.

Original languageEnglish
Article number043513
JournalApplied Physics Letters
Volume91
Issue number4
DOIs
StatePublished - 2007 Aug 3

Fingerprint Dive into the research topics of 'Improvement of charge storage characteristics on floating gated nonvolatile memory devices with In<sub>2</sub>O<sub>3</sub> nanoparticles embedded polyimide gate insulator'. Together they form a unique fingerprint.

  • Cite this