Improved Hot-Carrier Immunity in CMOS Analog Device with N2O-Nitrided Gate Oxides

G. Q. Lo, J. Ahn, Dim Lee Kwong

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


This paper reports on the hot-carrier effects on analog device performance parameters in CMOS devices with N2O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that N2O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFET's. In addition, comparison analog and digital device performance degradations has also been made.

Original languageEnglish
Pages (from-to)457-459
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 1992 Sep
Externally publishedYes


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