Impact of an Interfacial Layer on the Electrical Performance of p-Channel Tin Monoxide Field-Effect Transistors

Sang Jin Han, Sungmin Kim, Jae Kyeong Jeong, Hyeong Joon Kim

Research output: Contribution to journalLetter

2 Scopus citations

Abstract

This study examined the insertion effect of an interfacial, 7-nm-thick SiNx and SiOF layer on the performance of p-channel tin monoxide (SnO) field-effect transistors (FETs). The control SnO FETs, which had a thermal SiO2 gate dielectric, exhibited a mobility, gate swing, threshold voltage (VTH) and ION/OFF ratio of 2.8 cm2 V−1s−1, 6.9 V decade−1, 19.0 V, and 1.8 × 103, respectively. The SiNx-inserted SnO FETs showed a loss in drain current modulation due to the creation of interfacial trap states. In contrast, the gate swing and VTH values were improved substantially to 5.4 V decade−1 and 2.0 V for the SiOF-inserted SnO FETs, respectively, whereas the comparable mobility and ION/OFF ratio were preserved. The rationale of the improvement is discussed with respect to Fermi-energy pinning based on the valence band spectra.

Original languageEnglish
Article number1700213
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number10
DOIs
StatePublished - 2017 Oct

Keywords

  • SiOF
  • SnO
  • field-effect transistors
  • p-type semiconductors

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