Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC

Ho Keun Song, Jae Kyeong Jeong, Soo Gil Kim, Myung Yoon Um, Hoon Joo Na, Sang Yong Jung, Han Seok Seo, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim

Research output: Contribution to conferencePaper

Abstract

In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C 10H10Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.

Original languageEnglish
Pages582-586
Number of pages5
Publication statusPublished - 2004 Dec 1
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

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Song, H. K., Jeong, J. K., Kim, S. G., Um, M. Y., Na, H. J., Jung, S. Y., ... Kim, H. J. (2004). Homoepitaxial growth of iron-doped 4H-SiC by bis-trimethylsilylmethane and ferrocene precursors for semi-insulating SiC. 582-586. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.