In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping for the first time. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organosilicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, bis-cyclopentadienyliron (Ferrocene, [C 10H10Fe]). The crystal quality of epilayer was not degraded significantly despite of the Fe doping in that no changes were observed in rms roughness and FWHM of X-ray rocking curve. To evaluate a resistivity of epilayer, background donor concentration was measured and it was decreased by one order of magnitude after Fe doping. From this result, it is supposed that Fe could effectively act as a compensation center in the in-situ iron-doped 4H-SiC.
|Number of pages||5|
|Publication status||Published - 2004 Dec 1|
|Event||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|Period||04/10/3 → 04/10/8|