Highly Manufacturable 90nm NOR Flash Technology with 0.081 μm 2 Cell Size

Yunheub Song, Sangeun Lee, Taeyong Kim, Jungin Han, Hungyu Lee, Sunyoung Kim, Junghwan Park, Sewoong Park, Joonhuk Choi, Jaewoo Kim, Daeyup Lee, Myoungkwan Cho, Kyucharn Park, Kinam Kim

Research output: Contribution to journalConference article

4 Scopus citations


Highly manufacturable 90 nm NOR flash technology with 0.081 μm 2 cell size was discussed. The NOR cell was prepared by using KrF lithography for 90 nm patterning. It was concluded that this technology can be used for high density and low cost NOR flash memory.

Original languageEnglish
Pages (from-to)91-92
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2003 Oct 1
Event2003 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2003 Jun 102003 Jun 12


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