Highly manufacturable 90 nm NOR flash technology with 0.081 μm 2 cell size was discussed. The NOR cell was prepared by using KrF lithography for 90 nm patterning. It was concluded that this technology can be used for high density and low cost NOR flash memory.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2003 Oct 1|
|Event||2003 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 2003 Jun 10 → 2003 Jun 12