Highly manufacturable 90 nm NOR flash multi-level cell technology with WSix gate

Yun Heub Song, Jeong Ho Park, Sang Eun Lee, Jun Young Lee, Joong Shik Shin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The multi-level cell (MLC) technology in flash memory has been focused as one of solution for the enhancement of memory capacity and cost reduction. Recently, we had developed highly manufacturable 90 nm NOR flash MLC technology with WSix gate. This technology presents the control of several critical parameters such as low resistance of word-line, high transistor performance, narrow erase cell threshold voltage distribution, and high reliability characteristics. Here, tungsten suicide (WSix) using dichlorosilane (DCS) gas chemistry is used as gate material in order to reduce word-line resistance. Furthermore, the gate edge profile is carefully controlled by optimizing a gate oxidation condition for narrow cell threshold voltage distribution. Finally, MLC reliability characteristic was obtained by the advanced tunnel oxidation method.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number4-7
DOIs
StatePublished - 2007 Feb 9

Fingerprint

flash
Threshold voltage
cells
Oxidation
Flash memory
threshold voltage
Cost reduction
Tungsten
Tunnels
Transistors
oxidation
cost reduction
low resistance
Data storage equipment
tunnels
Gases
tungsten
transistors
chemistry
augmentation

Keywords

  • DCS WSi
  • MLC
  • NOR flash
  • Reliability
  • Word-line resistance

Cite this

Song, Yun Heub ; Park, Jeong Ho ; Lee, Sang Eun ; Lee, Jun Young ; Shin, Joong Shik. / Highly manufacturable 90 nm NOR flash multi-level cell technology with WSix gate. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 4-7.
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Highly manufacturable 90 nm NOR flash multi-level cell technology with WSix gate. / Song, Yun Heub; Park, Jeong Ho; Lee, Sang Eun; Lee, Jun Young; Shin, Joong Shik.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 4-7, 09.02.2007.

Research output: Contribution to journalArticle

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