High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking

Da Ye Song, Dongil Chu, Seung Kyo Lee, Sang Woo Pak, Eun Kyu Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated a vertically stacked p+-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p+-type Si substrate. The MoS2 flakes are transferred onto p+-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p+-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 109 cm·Hz1/2/W from the visible to near infrared spectral ranges.

Original languageEnglish
Article number124505
JournalJournal of Applied Physics
Volume122
Issue number12
DOIs
StatePublished - 2017 Sep 28

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heterojunctions
diodes
wavelengths
molybdenum disulfides
flakes
tapes
light emitting diodes
illumination
sensitivity
silicon
crystals

Cite this

Song, Da Ye ; Chu, Dongil ; Lee, Seung Kyo ; Pak, Sang Woo ; Kim, Eun Kyu. / High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking. In: Journal of Applied Physics. 2017 ; Vol. 122, No. 12.
@article{d903b64f5455437ca291fc4508bed2a7,
title = "High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking",
abstract = "We investigated a vertically stacked p+-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p+-type Si substrate. The MoS2 flakes are transferred onto p+-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p+-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 109 cm·Hz1/2/W from the visible to near infrared spectral ranges.",
author = "Song, {Da Ye} and Dongil Chu and Lee, {Seung Kyo} and Pak, {Sang Woo} and Kim, {Eun Kyu}",
year = "2017",
month = "9",
day = "28",
doi = "10.1063/1.4994740",
language = "English",
volume = "122",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "12",

}

High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking. / Song, Da Ye; Chu, Dongil; Lee, Seung Kyo; Pak, Sang Woo; Kim, Eun Kyu.

In: Journal of Applied Physics, Vol. 122, No. 12, 124505, 28.09.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking

AU - Song, Da Ye

AU - Chu, Dongil

AU - Lee, Seung Kyo

AU - Pak, Sang Woo

AU - Kim, Eun Kyu

PY - 2017/9/28

Y1 - 2017/9/28

N2 - We investigated a vertically stacked p+-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p+-type Si substrate. The MoS2 flakes are transferred onto p+-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p+-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 109 cm·Hz1/2/W from the visible to near infrared spectral ranges.

AB - We investigated a vertically stacked p+-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p+-type Si substrate. The MoS2 flakes are transferred onto p+-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p+-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 109 cm·Hz1/2/W from the visible to near infrared spectral ranges.

UR - http://www.scopus.com/inward/record.url?scp=85030160857&partnerID=8YFLogxK

U2 - 10.1063/1.4994740

DO - 10.1063/1.4994740

M3 - Article

AN - SCOPUS:85030160857

VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124505

ER -