High-performance triethylsilylethynyl anthradithiophene transistors prepared without solvent vapor annealing: The effects of self-assembly during dip-coating

Sooji Nam, Jaeyoung Jang, John E. Anthony, Jong Jin Park, Chan Eon Park, Kinam Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm2/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.

Original languageEnglish
Pages (from-to)2146-2154
Number of pages9
JournalACS Applied Materials and Interfaces
Volume5
Issue number6
DOIs
StatePublished - 2013 Mar 27

Fingerprint

Self assembly
Transistors
Vapors
Annealing
Thin films
Coatings
Semiconductor materials
Crystalline materials
Organic field effect transistors
Crystals
Semiconducting organic compounds
Carrier mobility
Charge carriers
Contacts (fluid mechanics)
Drying
Molecules
Substrates
Air
anthradithiophene

Keywords

  • dip-coating
  • evaporation-induced self-assembly
  • organic field-effect transistors
  • soluble acenes
  • solution-process
  • without solvent-vapor annealing

Cite this

@article{74faa2a7b1b74841908c392c62725d52,
title = "High-performance triethylsilylethynyl anthradithiophene transistors prepared without solvent vapor annealing: The effects of self-assembly during dip-coating",
abstract = "Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm2/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.",
keywords = "dip-coating, evaporation-induced self-assembly, organic field-effect transistors, soluble acenes, solution-process, without solvent-vapor annealing",
author = "Sooji Nam and Jaeyoung Jang and Anthony, {John E.} and Park, {Jong Jin} and Park, {Chan Eon} and Kinam Kim",
year = "2013",
month = "3",
day = "27",
doi = "10.1021/am303192b",
language = "English",
volume = "5",
pages = "2146--2154",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
number = "6",

}

High-performance triethylsilylethynyl anthradithiophene transistors prepared without solvent vapor annealing : The effects of self-assembly during dip-coating. / Nam, Sooji; Jang, Jaeyoung; Anthony, John E.; Park, Jong Jin; Park, Chan Eon; Kim, Kinam.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 6, 27.03.2013, p. 2146-2154.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-performance triethylsilylethynyl anthradithiophene transistors prepared without solvent vapor annealing

T2 - The effects of self-assembly during dip-coating

AU - Nam, Sooji

AU - Jang, Jaeyoung

AU - Anthony, John E.

AU - Park, Jong Jin

AU - Park, Chan Eon

AU - Kim, Kinam

PY - 2013/3/27

Y1 - 2013/3/27

N2 - Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm2/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.

AB - Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm2/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.

KW - dip-coating

KW - evaporation-induced self-assembly

KW - organic field-effect transistors

KW - soluble acenes

KW - solution-process

KW - without solvent-vapor annealing

UR - http://www.scopus.com/inward/record.url?scp=84875694826&partnerID=8YFLogxK

U2 - 10.1021/am303192b

DO - 10.1021/am303192b

M3 - Article

C2 - 23461729

AN - SCOPUS:84875694826

VL - 5

SP - 2146

EP - 2154

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 6

ER -