High-K and low loss Bi1.5Zn1.0Nb1.5O 7/polyimide composite films for application in embedded capacitors

Seung Hoon Choi, Il Doo Kim, Jae Min Hong, Seong-Geun Oh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on the role of Bi1.5Zn1.0Nb 1.5O7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.

Original languageEnglish
Pages (from-to)241-246
Number of pages6
JournalMacromolecular Symposia
Volume249-250
DOIs
StatePublished - 2007 Aug 1

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Composite films
polyimides
Polyimides
capacitors
Capacitors
Dielectric losses
dielectric loss
composite materials
Coupling agents
retaining
fillers
Fillers
Permittivity
ceramics
permittivity
matrices

Keywords

  • BZN
  • Capacitors
  • Dielectric properties
  • Embedded
  • Polyimides

Cite this

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High-K and low loss Bi1.5Zn1.0Nb1.5O 7/polyimide composite films for application in embedded capacitors. / Choi, Seung Hoon; Kim, Il Doo; Hong, Jae Min; Oh, Seong-Geun.

In: Macromolecular Symposia, Vol. 249-250, 01.08.2007, p. 241-246.

Research output: Contribution to journalArticle

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