Heat transfer and phase transformations in laser annealing of thin Si films

Seung-Jae Moon, Minghong Lee, Costas P. Grigoropoulos

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques.

Original languageEnglish
Pages (from-to)253-264
Number of pages12
JournalJournal of Heat Transfer
Volume124
Issue number2
DOIs
StatePublished - 2002 Apr 1

Fingerprint

laser annealing
Crystallization
Crystal growth
Polysilicon
phase transformations
crystal growth
Phase transitions
heat transfer
Annealing
Heat transfer
nonequilibrium conditions
Lasers
Film growth
thin films
silicon films
Amorphous silicon
Pulsed lasers
Liquid crystal displays
amorphous silicon
pulsed lasers

Keywords

  • Crystal growth
  • Heat transfer
  • Laser
  • Solidification
  • Thin films

Cite this

Moon, Seung-Jae ; Lee, Minghong ; Grigoropoulos, Costas P. / Heat transfer and phase transformations in laser annealing of thin Si films. In: Journal of Heat Transfer. 2002 ; Vol. 124, No. 2. pp. 253-264.
@article{aaa11839dabe48939ee0709fc6093b12,
title = "Heat transfer and phase transformations in laser annealing of thin Si films",
abstract = "Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques.",
keywords = "Crystal growth, Heat transfer, Laser, Solidification, Thin films",
author = "Seung-Jae Moon and Minghong Lee and Grigoropoulos, {Costas P.}",
year = "2002",
month = "4",
day = "1",
doi = "10.1115/1.1447941",
language = "English",
volume = "124",
pages = "253--264",
journal = "Journal of Heat Transfer",
issn = "0022-1481",
number = "2",

}

Heat transfer and phase transformations in laser annealing of thin Si films. / Moon, Seung-Jae; Lee, Minghong; Grigoropoulos, Costas P.

In: Journal of Heat Transfer, Vol. 124, No. 2, 01.04.2002, p. 253-264.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Heat transfer and phase transformations in laser annealing of thin Si films

AU - Moon, Seung-Jae

AU - Lee, Minghong

AU - Grigoropoulos, Costas P.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques.

AB - Recrystallization of thin amorphous silicon (a-Si) films can yield polysilicon (p-Si) material with functional properties suitable for fabrication of electronic devices, including high definition large area active matrix liquid crystal displays. Pulsed laser-effected melting and recrystallization is exceptionally effective since it avoids damage to the underlying insulator structure. The ensuing phase transformations and ultimately the quality of the produced p-Si material strongly depend on the temperature history. This article presents a review of research aiming to understand the complex nucleation, resolidification and crystal growth phenomena that evolve under severely non-equilibrium conditions. It is shown that elucidation of the fundamental thermodynamic processes enables conception of novel practical thin film crystal growth techniques.

KW - Crystal growth

KW - Heat transfer

KW - Laser

KW - Solidification

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0036537446&partnerID=8YFLogxK

U2 - 10.1115/1.1447941

DO - 10.1115/1.1447941

M3 - Article

AN - SCOPUS:0036537446

VL - 124

SP - 253

EP - 264

JO - Journal of Heat Transfer

JF - Journal of Heat Transfer

SN - 0022-1481

IS - 2

ER -