Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs

Se Jong Rhee, Feng Zhu, Hyoung Sub Kim, Changhwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Injo Ok, Siddarth A. Krishnan, Jack C. Lee

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A novel approach of fabricating laminated TiO 2 /HfO 2 bilayer multimetal oxide dielectric has been developed for high-performance CMOS applications. Ultrathin equivalent oxide thickness (∼ 8 Å) has been achieved with increased effective permittivity (κ ∼ 36). Hysteresis was significantly reduced using the bilayer dielectric. Top TiO 2 layer was found to induce effective negative charge from the flatband voltage shift. Leakage current characteristic was slightly higher than control HfO 2 , and this is believed to be due to the lower band offset of TiO 2 . However, the interface state density of this bilayer structure was found to be similar to that of HfO 2 MOSCAP because the bottom layer is HfO 2 . These results demonstrate the feasibility of new multimetal dielectric application for future CMOS technology.

Original languageEnglish
Pages (from-to)225-227
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
StatePublished - 2006 Apr 1


  • Bilayer
  • Equivalent oxide thickness (EOT)
  • Fixed charge
  • Flatband voltage
  • HfO
  • Leakage current density
  • TiO

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    Rhee, S. J., Zhu, F., Kim, H. S., Choi, C., Kang, C. Y., Zhang, M., Lee, T., Ok, I., Krishnan, S. A., & Lee, J. C. (2006). Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs. IEEE Electron Device Letters, 27(4), 225-227. https://doi.org/10.1109/LED.2006.871187