Growth of InAs quantum dots with a strain-reducing layer for 1.45 μm emission by migration-enhanced epitaxy

Jongbum Nah, Eun Kyu Kim

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

In As self-assembled quantum-dot (QD) structures with In 0.3Ga0.7As strain-reducing layers were successfully grown on GaAs substrates by migration-enhanced epitaxy. At room temperature, the photoluminescence (PL) peak wavelength of QDs appeared at ∼1.3 μum, which is applicable for fiber-optic communications. After introducing two additional periods of InAs/InGaAs supperlattice layers on the dots, the PL peak showed a further redshift, as well as a sharper full-width at half maximum (FWHM). Emission at a peak wavelength of 1.45 μm with a FWHM of 30 meV was achieved for InAs QDs on GaAs.

Original languageEnglish
Pages (from-to)1362-1365
Number of pages4
JournalJournal of the Korean Physical Society
Volume51
Issue number4
DOIs
StatePublished - 2007 Oct

Keywords

  • InAs
  • Molecular beam epitaxy
  • Photoluminescence
  • Quantum dot
  • Strain-reducing layer

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