Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer

Hooyoung Song, Jooyoung Suh, Eun Kyu Kim, Kwang Hyeon Baik, Sung Min Hwang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Nonpolar (1 12 0) a-plane GaN films have been grown using the multi-buffer layer technique on (11 0 2) r-plane sapphire substrates. In order to obtain epitaxial a-plane GaN films, optimized growth condition of the multi-buffer layer was investigated using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy measurements. The experimental results showed that the growth conditions of nucleation layer and three-dimensional growth layer significantly affect the crystal quality of subsequently grown a-plane GaN films. At the optimized growth conditions, omega full-width at half maximum values of (1120) X-ray rocking curve along c- and m-axes were 430 and 530 arcsec, respectively. From the results of transmission electron microscopy, it was suggested that the high crystal quality of the a-plane GaN film can be obtained from dislocation bending and annihilation by controlling of the island growth mode.

Original languageEnglish
Pages (from-to)3122-3126
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number21
DOIs
StatePublished - 2010 Oct 15

Fingerprint

Aluminum Oxide
Buffer layers
Sapphire
sapphire
buffers
optimization
Substrates
Transmission electron microscopy
Crystals
Film growth
Full width at half maximum
transmission electron microscopy
Atomic force microscopy
Nucleation
crystals
X ray diffraction
x rays
X rays
atomic force microscopy
nucleation

Keywords

  • A1. X-ray diffraction
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

Cite this

Song, Hooyoung ; Suh, Jooyoung ; Kim, Eun Kyu ; Hyeon Baik, Kwang ; Hwang, Sung Min. / Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 21. pp. 3122-3126.
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Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer. / Song, Hooyoung; Suh, Jooyoung; Kim, Eun Kyu; Hyeon Baik, Kwang; Hwang, Sung Min.

In: Journal of Crystal Growth, Vol. 312, No. 21, 15.10.2010, p. 3122-3126.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Song, Hooyoung

AU - Suh, Jooyoung

AU - Kim, Eun Kyu

AU - Hyeon Baik, Kwang

AU - Hwang, Sung Min

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AB - Nonpolar (1 12 0) a-plane GaN films have been grown using the multi-buffer layer technique on (11 0 2) r-plane sapphire substrates. In order to obtain epitaxial a-plane GaN films, optimized growth condition of the multi-buffer layer was investigated using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy measurements. The experimental results showed that the growth conditions of nucleation layer and three-dimensional growth layer significantly affect the crystal quality of subsequently grown a-plane GaN films. At the optimized growth conditions, omega full-width at half maximum values of (1120) X-ray rocking curve along c- and m-axes were 430 and 530 arcsec, respectively. From the results of transmission electron microscopy, it was suggested that the high crystal quality of the a-plane GaN film can be obtained from dislocation bending and annihilation by controlling of the island growth mode.

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