Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition

T. W. Kim, B. J. Koo, M. Jung, S. B. Kim, H. L. Park, H. Lim, J. I. Lee, K. N. Kang

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38 Scopus citations

Abstract

The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280°C appeared to have an optimum crystal perfection at a substrate temperature of about 245°C. These results also indicated that the CdTe films grown above 245°C contained a significant problem due to interdiffusion from the InSb substrates during the growth.

Original languageEnglish
Pages (from-to)1049-1051
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number2
DOIs
StatePublished - 1992
Externally publishedYes

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