Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom, W. N. Kang, Y. S. Yoon, J. I. Lee, D. J. Choi, Taewhan Kim, K. Y. Seo, P. H. Hur, C. Y. Kim

Research output: Contribution to journalArticle

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Abstract

Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalThin Solid Films
Volume213
Issue number1
DOIs
StatePublished - 1992 May 29

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Organic Chemicals
Organic chemicals
Silicon
metalorganic chemical vapor deposition
Chemical vapor deposition
low pressure
Metals
Thin films
silicon
thin films
Capacitance measurement
Aluminum Oxide
nitrous oxides
Interface states
Voltage measurement
Nitrous Oxide
MIS (semiconductors)
Auger electron spectroscopy
Aluminum
Sapphire

Cite this

Yom, S. S. ; Kang, W. N. ; Yoon, Y. S. ; Lee, J. I. ; Choi, D. J. ; Kim, Taewhan ; Seo, K. Y. ; Hur, P. H. ; Kim, C. Y. / Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition In: Thin Solid Films. 1992 ; Vol. 213, No. 1. pp. 72-75.
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abstract = "Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.",
author = "Yom, {S. S.} and Kang, {W. N.} and Yoon, {Y. S.} and Lee, {J. I.} and Choi, {D. J.} and Taewhan Kim and Seo, {K. Y.} and Hur, {P. H.} and Kim, {C. Y.}",
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Yom, SS, Kang, WN, Yoon, YS, Lee, JI, Choi, DJ, Kim, T, Seo, KY, Hur, PH & Kim, CY 1992, ' Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition ', Thin Solid Films, vol. 213, no. 1, pp. 72-75. https://doi.org/10.1016/0040-6090(92)90476-R

Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition . / Yom, S. S.; Kang, W. N.; Yoon, Y. S.; Lee, J. I.; Choi, D. J.; Kim, Taewhan; Seo, K. Y.; Hur, P. H.; Kim, C. Y.

In: Thin Solid Films, Vol. 213, No. 1, 29.05.1992, p. 72-75.

Research output: Contribution to journalArticle

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T1 - Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition

AU - Yom, S. S.

AU - Kang, W. N.

AU - Yoon, Y. S.

AU - Lee, J. I.

AU - Choi, D. J.

AU - Kim, Taewhan

AU - Seo, K. Y.

AU - Hur, P. H.

AU - Kim, C. Y.

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Y1 - 1992/5/29

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AB - Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.

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