Abstract
Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.
| Original language | English |
|---|---|
| Pages (from-to) | 72-75 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 213 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1992 May 29 |
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Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition . / Yom, S. S.; Kang, W. N.; Yoon, Y. S.; Lee, J. I.; Choi, D. J.; Kim, Taewhan; Seo, K. Y.; Hur, P. H.; Kim, C. Y.
In: Thin Solid Films, Vol. 213, No. 1, 29.05.1992, p. 72-75.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth of γ-Al 2 O 3 thin films on silicon by low pressure metal-organic chemical vapour deposition
AU - Yom, S. S.
AU - Kang, W. N.
AU - Yoon, Y. S.
AU - Lee, J. I.
AU - Choi, D. J.
AU - Kim, Taewhan
AU - Seo, K. Y.
AU - Hur, P. H.
AU - Kim, C. Y.
PY - 1992/5/29
Y1 - 1992/5/29
N2 - Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.
AB - Metal-organic chemical vapour deposition of Al 2 O 3 using aluminium isopropoxide (Al(OC 3 H 7 ) 3 ) and nitrous oxide (N 2 O) via thermal pyrolysis was investigated with the goal of producing high quality Al 2 O 3 p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al 2 O 3 heteroepitaxial film. The stoichiometry of the grown Al 2 O 3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al 2 O 3 insulator gate, and the interface state densities at the Al 2 O 3 p-Si heterointerface were approximately 10 11 eV -1 cm -2 , at levels centred in the silicon energy gap.
UR - http://www.scopus.com/inward/record.url?scp=0040301919&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(92)90476-R
DO - 10.1016/0040-6090(92)90476-R
M3 - Article
AN - SCOPUS:0040301919
VL - 213
SP - 72
EP - 75
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -