Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom; W. N. Kang; Y. S. Yoon; J. I. Lee; D. J. Choi; T. W. Kim; K. Y. Seo; P. H. Hur; C. Y. Kim

doi:10.1016/0040-6090(92)90476-R

Growth of γ-Al₂O₃ thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom, W. N. Kang, Y. S. Yoon, J. I. Lee, D. J. Choi, T. W. Kim, K. Y. Seo, P. H. Hur, C. Y. Kim

DEPARTMENT OF ELECTRONIC ENGINEERING

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Metal-organic chemical vapour deposition of Al₂O₃ using aluminium isopropoxide (Al(OC₃H₇)₃) and nitrous oxide (N₂O) via thermal pyrolysis was investigated with the goal of producing high quality Al₂O₃p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al₂O₃ heteroepitaxial film. The stoichiometry of the grown Al₂O₃ film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al₂O₃ insulator gate, and the interface state densities at the Al₂O₃p-Si heterointerface were approximately 10¹¹ eV^-1 cm^-2, at levels centred in the silicon energy gap.

Original language	English
Pages (from-to)	72-75
Number of pages	4
Journal	Thin Solid Films
Volume	213
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(92)90476-R
State	Published - 1992 May 29

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@article{e77eaa59d5c3487c9614c22b3da3708c,

title = "Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition",

abstract = "Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.",

author = "Yom, {S. S.} and Kang, {W. N.} and Yoon, {Y. S.} and Lee, {J. I.} and Choi, {D. J.} and Kim, {T. W.} and Seo, {K. Y.} and Hur, {P. H.} and Kim, {C. Y.}",

year = "1992",

month = may,

day = "29",

doi = "10.1016/0040-6090(92)90476-R",

language = "English",

volume = "213",

pages = "72--75",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition

AU - Yom, S. S.

AU - Kang, W. N.

AU - Yoon, Y. S.

AU - Lee, J. I.

AU - Choi, D. J.

AU - Kim, T. W.

AU - Seo, K. Y.

AU - Hur, P. H.

AU - Kim, C. Y.

PY - 1992/5/29

Y1 - 1992/5/29

N2 - Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.

AB - Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.

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