Abstract
Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.
Original language | English |
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Pages (from-to) | 72-75 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 213 |
Issue number | 1 |
DOIs | |
State | Published - 1992 May 29 |