Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition

S. S. Yom, W. N. Kang, Y. S. Yoon, J. I. Lee, D. J. Choi, T. W. Kim, K. Y. Seo, P. H. Hur, C. Y. Kim

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Abstract

Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a γ-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal-insulator-semiconductor behaviour for samples with the Al2O3 insulator gate, and the interface state densities at the Al2O3p-Si heterointerface were approximately 1011 eV-1 cm-2, at levels centred in the silicon energy gap.

Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalThin Solid Films
Volume213
Issue number1
DOIs
StatePublished - 1992 May 29

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