Growth and characterization of Al2O3 insulator gate on p-InP and p-Si by metallorganic chemical vapour deposition at low temperatures

T. W. Kim, H. Lim, Y. D. Zheng, A. A. Reeder, B. D. Mccombe

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Abstract

Metallorganic chemical vapour deposition of Al2O3 from Al(O-C3H7)3 via pyrolysis at low (∼280 °C) temperature was investigated with the goal of producing high quality Al2O3/p-InP (1 0 0) and Al2O3/p-Si (1 0 0) interfaces. Ellipsometer measurements of Al2O3 have determined the refractive index of the film to be about 1.55. Room temperature capacitance-voltage measurements were used to characterize the electrical properties of the structures after metal gate electrodes have been deposited. Low temperature conductance-voltage measurements were also carried out to investigate the quality of the Al2O3/InP interfaces. The interface state densities Al2O3/p-InP and Al2O3/p-Si determined from deep-level transient spectroscopy were approximately 1012 eV-1 cm-2 and 1011 eV-1 cm-2.

Original languageEnglish
Pages (from-to)5531-5535
Number of pages5
JournalJournal of Materials Science
Volume27
Issue number20
DOIs
StatePublished - 1992 Jan

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