Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface

A. A. Saranin, A. V. Zotov, V. G. Kotlyar, O. A. Utas, K. V. Ignatovich, T. V. Kasyanova, Y. S. Park, Wanjun Park

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Self-organized formation of Si nanodot arrays on the oxidized Si(1 0 0) surfaces has been studied using scanning tunneling microscopy. The growth of the oxide layer and subsequent Si deposition have been conducted under ultra-high vacuum conditions. Number density of the grown Si nanodots was in the range from 3×1012 to 8×1012 cm-2 and their average size varied from 3 to 5 nm. Effect of the SiO2 layer thickness (0.2-2.2 nm), amount of deposited Si (0.5-7.5 ML) and growth temperature (60-450 °C) on the Si nanodot number density and size distribution has been determined.

Original languageEnglish
Pages (from-to)199-203
Number of pages5
JournalApplied Surface Science
Volume243
Issue number1-4
DOIs
StatePublished - 2005 Apr 30

Keywords

  • Atom-solid interactions
  • Oxygen
  • Scanning tunneling microscopy (STM)
  • Silicon
  • Surface structure, morphology, roughness, and topography

Fingerprint Dive into the research topics of 'Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface'. Together they form a unique fingerprint.

  • Cite this

    Saranin, A. A., Zotov, A. V., Kotlyar, V. G., Utas, O. A., Ignatovich, K. V., Kasyanova, T. V., Park, Y. S., & Park, W. (2005). Formation of Si nanodot arrays on the oxidized Si(1 0 0) surface. Applied Surface Science, 243(1-4), 199-203. https://doi.org/10.1016/j.apsusc.2004.09.063