Formation mechanism of ferromagnetism in Si1-xMnx diluted magnetic semiconductors

Y. H. Kwon, T. W. Kang, H. Y. Cho, T. W. Kim

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Si1-xMnx diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si1-xMnx crystalline bulks. Hall effect measurements showed that annealed Si1-xMnx bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si1-xMn x bulks originated from the interaction between interstitial and substitutional Mn+ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si1-xMnx DMS bulks.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalSolid State Communications
Issue number5
StatePublished - 2005 Nov 1


  • A. Semiconductors
  • C. Impurities in semiconductors

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